NOT gate
英 [nɒt ɡeɪt]
美 [nɑːt ɡeɪt]
“非”门
双语例句
- Excuse me for not meeting you at the gate.
失迎！失迎！ - And when she knew Peter's voice, she opened not the gate for gladness, but ran in, and told how Peter stood before the gate.
听见是彼得的声音，就欢喜的顾不得开门，跑进去告诉众人说，彼得站在门外。 - But they did not open the gate, so he took his lute and began to play it most beautifully with his two front feet.
他于是坐了下来，取出他的琴，伸出两只前腿弹起琴来，音乐非常优美动听。 - Quantum NOT gate is used to realize quantum mutation to avoid premature convergence.
采用量子非门实现量子变异以阻止早熟收敛； - Well, they might not even know what the gate is.
就是说，他们可能连星门是什么都不知道。 - For the bottom of the boilers not set cut-off gate of hydraulic generator, common inside guiding wheel is difficult to meet their long running time of need.
对于炉底未设液压关断门的机组，普通内导轮难以满足其长周期安全运行的需要。 - It matters not how strait the gate.
无论命运之门多么狭窄。 - Please not voluntarily pulls the refrigerator gate, if needs the drink please to look for the stage.
请勿自行拉扯冰箱门，如需饮料请找前台。 - Actually, these symbols may not be gate related.
事实上，这些符号不一定跟星门有关系。 - Whether you're in San Francisco for business or pleasure, it is a crime not to cross the Golden Gate bridge.
无论你去旧金山是办事还是游玩，如不过金门大桥可是一大憾事。 - Tianshu was not situated in Dingding Gate of Luoyang, but out of Duan Gate.
天枢不是矗立在洛阳城定鼎门内，而是在端门外。 - The teacher said not partial section, I want to say I'm not partial section, each gate is much different.
老师说不能偏科，我想说我也不偏科，每门都差不多烂。 - Do not dial gate to earth.
不要向地球拨号星门。 - How could he not recognize the gate address?
他怎么就没有认出这个星门地址？ - Feidong serves not only as the east gate of Hefei, but also as the bridgehead for the "eastward development", moreover, it is a golden place for the" Yangtze River Delta Economy "to extend westward!
肥东，既是合肥的东大门，又是安徽省“东向发展”的桥头堡，更是“长三角”向西延伸必经的黄金宝地！ - He dared not stop at the gate, he knew he would never have the courage to enter if he did.
他不敢站住，只要一站住，他知道就没有勇气进去。 - However, the above method is not applicable for the gate chamber when the foundation of weir body is "high-low foot".
然而对于堰体基础呈高低脚的闸室，该方法很不适用。 - It particularly makes the following extensions to GO-FLOW: ( 1) Some new logical modeling operators such as "K/ N" gate, "Not" gate, "Phased mission" gate are introduced and corresponding calculating principles are also given.
引入N中取K门、非门、阶段任务运算符，并给出相应的运算规则。 - The circuit which is designed by using counter 、 decipherer and not gate digital IC, has the multifunction of the sound light displaying 、 overtime alarming and electronical tally. It can be used in manifold intelligence competition situation.
利用计数器、译码器、非门等数字集成电路设计的抢答电路具有声光显示、超时报警与电子计分等多种功能，适用于各种智力竞赛场所。 - Construction of Like-Control-Not Gate with Raman Interaction
利用Raman相互作用构造类可控非门 - The novel circuit overcomes the shortcomings the existing TTL NOT gate circuit has.
说明了新电路如何克服现有的TTL非门电路自身的弱点，使其工作更加稳定可靠。 - The Contrivance of a Novel TTL NOT Gate Circuit
一种新型TTL非门电路的设计 - Study on About the Circuit of 4 Values NOT Gate and NAND Gate
四值非门和与非门电路的研究 - How to realize molecular logic OR gate, NOT gate and NAND gate based on sticker model of DNA computing and approach to implementation of molecular logic AND gate presented previously, which is proposed in this paper.
在这篇论文中，我们在先前提出的基于粘贴DNA计算模型的分子逻辑与门的实现方法的基础上，进一步提出了基于粘贴DNA计算模型的分子逻辑或门和与非门的实现方法。 - Since any logic gate can be constructed by two-qubit controlled not gates ( CN gate) and one qubit rotation gate ( R gate), the realization of the CN and R gates has been studied extensively.
任意量子门都可以由二比特控制非门（CN门）和单比特旋转门（R门）组成。因此，人们致力于研究如何实现CN门和R门。 - Using Oscilloscope to Measure the Main Parameters of TTL and Not Gate
利用示波器测定TTL与非门的主要参数 - With the further downscaling of the transistors, conventional SiO2 can not meet the gate dielectric demands of the metal-oxide-semicoductor-field-effect transistor ( MOSFET) of the next generation because of the leakage current problem.
随着晶体管的进一步小型化，由于存在漏电流，传统的SiO2已经无法满足下一代金属氧化物半导体场效应管（MOSFET）的栅介质要求。 - The main evolution way of various algorithms has quantum not gate, quantum rotation gate and all kinds of hybrid evolutionary method, in which quantum gate is a widely adopted method.
其主要的进化方式有量子非门、量子旋转门及各种混合进化方法，其中量子旋转门是被广泛采用的一种进化方式。 - When setting different numbers of injection gates in annular channel, the filling time is slightly reduced, but the effect is not significant while injection gate increase.
环形流道上设置不同数目的注入口，发现虽然注入口增多时，充模时间稍微减少，但影响效果不明显。 - The results show that charge to breakdown Qbd depends not only on the gate oxide quality but also on the voltage stress, current density and the gate oxide area.
结果表明：相关击穿电荷Qbd除了与氧化层质量有关外，还与电压应力和电流密度以及栅氧化层面积有关。